IEEE

600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor

Abstract: This letter reports a GaN vertical trench metal-oxide-semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n±GaN source layer was performed ...
IEEE

A Compact Balanced-to-Balanced Filtering Gysel Power Divider Using $\lambda _{g}$ /2 Resonators and Short-Stub-Loaded Resonator

Abstract: In this letter, a compact balanced-to-balanced filtering power divider (FPD) is presented. It is composed of three half-wavelength resonators and a short-stub-loaded resonator (SSLR). Due to ...